Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack
An analytical model of threshold voltage fluctuations due to random discrete traps at Si/SiO 2
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO
2 gate dielectric stack is presented in this paper. The model is derived based on the solution
of 2-D Poisson's equation considering both position and number fluctuation of traps. The
distribution of traps at the Si/SiO 2 interfaces and in both gate oxide regions in double-gate
structure are obtained using the bivariate Poisson distribution. The impact of interface and …
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO
2 gate dielectric stack is presented in this paper. The model is derived based on the solution
of 2-D Poisson's equation considering both position and number fluctuation of traps. The
distribution of traps at the Si/SiO 2 interfaces and in both gate oxide regions in double-gate
structure are obtained using the bivariate Poisson distribution. The impact of interface and …
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