Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model
results are verified against simulations and good agreements are observed. Analytical
expressions for subthreshold swing, drain induced barrier lowering effect, and threshold
voltage roll-off characteristics are presented. The explicit expressions for threshold voltage
and subthreshold swing make the model useful in the practical applications of the device.