Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic
layer etching including exposing the carbon-containing material to an oxygen-containing
gas without a plasma to modify a surface of the carbon-containing material and exposing the
carbon-containing material to an inert gas and igniting a plasma to remove the modified
surface of the carbon-containing material. Methods may be used for multiple patterning …