… For silicon, the strong desire to achieve 4-fold coordination is … surface chemistry at an atomic
level is yet in its infancy. The interaction of foreign atoms or molecules with silicon surfaces …

… unit cell, and each silicon atom below the surface is bonded to two atoms in the plane below
and two atoms in theplane above. The structure of the bulk-terminated surface is shown in …

… structure ofsingle atoms on surfaces can be studied in detail. The … surface states observed
on silicon surfaces are found to derive from different atomic-scale features in the surface …

… dependent interaction between the ions and target atoms. The method is basically a two …
atomic processes for Li7, Bll, Cia, N1', 0". Ne*O, Sip8, and P31 ions incident randomly on silicon …

… So, atomic transport mechanisms in the thermal growth of silicon oxynitride ultrathin films on
… the atomic transport mechanisms during thermal growth of ultrathin films of silicon nitride on …

… simple calculations permit a consistent picture of the role of surface processes such as
the capture of atoms at steps, adsorption and surface diffusion in the growth of silicon layers. …

… İn conclusion, we show step arrangements on clean Si (111) surfaces and their behaviour
on formation of the native oxide, which implies that the oxidation process is not dominated by …

… silicon atomic removal at low scanning loads occurs only when a chemically-reactive
counter-surface … -surface play critical roles in the tip-based mechanochemical etching of the …

… We will focus on those approaches which are instrumental in getting a reliable atomic-scale
picture of silicon surfaces. These are the ab initio techniques, free from adjustable parame…

… an atom jumping over to the tip. We use this effect as virtue to remove a silicon atom from the
surface … The memory is pre-formatted with a 1 everywhere by controlled deposition of silicon …