Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering
High-k hafnium-silicate films were deposited by RF magnetron sputtering approach on
silicon wafer. The microstructure has been investigated using the combination of
transmission electron microscopy and atom probe tomography. It was evidenced that the
elaborated HfSiO thin films subsequently annealed at 950° C during 15min leads to a
complex phase separated nanostructure where silica, hafnia and silicon nanoclusters
coexist. The formation of silicon nanoclusters in hafnia-based host was never reported …
silicon wafer. The microstructure has been investigated using the combination of
transmission electron microscopy and atom probe tomography. It was evidenced that the
elaborated HfSiO thin films subsequently annealed at 950° C during 15min leads to a
complex phase separated nanostructure where silica, hafnia and silicon nanoclusters
coexist. The formation of silicon nanoclusters in hafnia-based host was never reported …
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