The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect
transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced
channel appropriate for the quasi-two-dimensional nature of the inverted channel. The
saturation point drain velocity is shown to rise with the increasing drain voltage approaching
the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum
confinement effect degrades the channel mobility to the confining gate electric field as well …