Band gap energy modifications observed in trivalent In substituted nanocrystalline SnO2
The effect of In doping concentration on the optical band gap of nano-Sn O 2 is investigated
as a function of calcination temperature. Changes in the band gap explain the room
temperature H 2 gas sensing of doped nano-Sn O 2. The band gap was found to be lower
than those reported for Sn O 2 (3.6 eV) from 2.55 to 3.43 eV and may be explained by the
presence of nonequilibrium oxygen vacancies in the oxide lattice and band bending effects
at the nanoscale.
as a function of calcination temperature. Changes in the band gap explain the room
temperature H 2 gas sensing of doped nano-Sn O 2. The band gap was found to be lower
than those reported for Sn O 2 (3.6 eV) from 2.55 to 3.43 eV and may be explained by the
presence of nonequilibrium oxygen vacancies in the oxide lattice and band bending effects
at the nanoscale.
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