… ESISTIVE memory elements have spurred significant research interest due to their potential
… have been proposed as the data storage elements for resistive memories. Hence, there is a …

… (NV) storage elements combined with CMOS technology … data bits into their non-volatile
equivalent, such storage elements … to switch the MTJ state (ie, to write a non-volatile data bit), we …

… (MRAM) with a novel magnetic bit cell and toggle switching mode is … process with a bit
cell size of 1.55 m2. The new … In this paper, we have presented a novel MRAM bit cell and …

… each bitcell is comprised entirely of four-terminal magnetic … on a three-terminal MRAM element
that is switched by current-… driving an output device, or storage cell. We will first describe a …

… In this circuit, the magnetic tunnel junction (MTJ) elements are … to switch the bit at the
intersection, but leave other bits on … affects the “easy” magnetic axis of the bit, while another line …

… of cells where each cell can store two bits of information. The pair … magnetic fields applied
is such that it requires the combination of both magnetic fields to switch the memory element. …

… The cell architecture is based on a minimumsized active … magnetic tunnel junction element.
In the ITIMTJ MRAM, the MTI … to switch the bit at the intersection, hut leave other bits on either …

… For example, only unipolar currents are necessary for both word- and bit-line. Moreover,
unwanted switching of elements which may occur by only addressing one of the lines (half-…

… requires dedicated circuit components or additional testing … SB cell is switched during the
write-back while (c) another MTJ is kept unchanged according to the bit produced from the cell …

… -difference method with cubic cells as small as 5 nm, giving a total number of cells of more
than … important components needed to achieve a high areal density in perpendicular magnetic …