… elements for resistive memories. Hence, there is a need to develop optimization techniques
for bit-cell … Magnetic tunneling junction (MTJ) is a device belonging to memristive systems [1] …

… -transfer torque magnetic tunnel junctions (STT-MTJs) as non-volatile storage elements. The
… Early MTJ devices were switched by a magnetic fields generated by two current carrying …

… each bitcell is comprised entirely of four-terminal magnetic … three-terminal MRAM element
that is switched by current-driven … Array periphery elements (ie, anything not in the bitcell array …

… a device-to-bit-cell level simulation framework for voltage-assisted switching of the MTJs,
which … where ζ is a vector with components that are zero mean Gaussian random variables with …

… with a low switching field distribution for bit patterned magnetic recording. The … the composite
components. Media with alternating layers of Co and Pd or Ni has … The bit cell was 50 nm …

… (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit …
oxide–semiconductor process with a bit cell size of 1.55 m2. The new bit cell uses a balanced …

… switching field distribution, which arises from the local variations of the media intrinsic
magnetic … from all the surrounding cells is divided into two parts: one is the magneto-static field …

… In this circuit, the magnetic tunnel junction (MTJ) elements … The MRAM bit cell is programmed
by a magnetic field, which … -speed switching and thermal stability of magnetic disk media. In …

… by SRAM as the single-bit cell area is equivalent to 150–300 … are stable without an external
magnetic field. Since there is a … y components are 100 times higher than the z components in …

… magnetic switching jitter is the magnetic switching field distribution (SFD) normalized by the
head field gradient. There are two contributions to the magnetic … II-B, two distinct components …