Blue luminescence from the InGaN multiple quantum wells
AK Viswanath, JI Lee, ST Kim, GM Yang, HJ Lee… - Physica E: Low …, 2005 - Elsevier
We have fabricated very high-quality In0. 13Ga0. 87N/GaN multiple quantum wells with
thickness as small as 10Å on (0001) sapphire substrate using metal organic chemical
vapour deposition (MOCVD). We have investigated these ultra-thin multiple quantum wells
by continuous wave (cw) and time resolved spectroscopy in the picosecond time scales in a
wide range of temperatures from 10K to 290K. In the luminescence spectrum at 10K we
observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of …
thickness as small as 10Å on (0001) sapphire substrate using metal organic chemical
vapour deposition (MOCVD). We have investigated these ultra-thin multiple quantum wells
by continuous wave (cw) and time resolved spectroscopy in the picosecond time scales in a
wide range of temperatures from 10K to 290K. In the luminescence spectrum at 10K we
observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of …
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