sputtering at low power without substrate heating revealed improved stoichiometry and
reduced free carrier concentration with increasingly energetic growth conditions, which is
opposite to what is typically observed. Hall measurements showed a decrease in carrier
concentration from 6.9× 10 19 cm− 3 to 1.4× 10 19 cm− 3 as power increased from 40 W to
120 W, and a decrease in carrier concentration from 8.6× 10 19 cm− 3 to 2.6× 10 19 cm− 3 …