Bounds to electron spin qubit variability for scalable CMOS architectures
Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and
scalable fabrication. In the age of quantum technology, however, the metrics that crowned
Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact
upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale
roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop
theoretical tools to analyse these results. Atomistic tight binding and path integral Monte …
scalable fabrication. In the age of quantum technology, however, the metrics that crowned
Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact
upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale
roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop
theoretical tools to analyse these results. Atomistic tight binding and path integral Monte …
以上显示的是最相近的搜索结果。 查看全部搜索结果