Buckling suppression of SiGe islands on compliant substrates
A cap layer was used to suppress buckling during the relaxation of compressively strained
30 nm Si 0.7 Ge 0.3 islands on borophosphorosilicate glass. The lateral expansion and
buckling of a bilayer structure made of SiGe and a cap layer were studied by both modeling
and experiment. Both epitaxial silicon and amorphous silicon dioxide (SiO 2) caps were
investigated. Caps stiffen the islands to reduce buckling and accelerate the lateral
relaxation, so that larger, flat, relaxed SiGe islands can be achieved. Using a 31 nm silicon …
30 nm Si 0.7 Ge 0.3 islands on borophosphorosilicate glass. The lateral expansion and
buckling of a bilayer structure made of SiGe and a cap layer were studied by both modeling
and experiment. Both epitaxial silicon and amorphous silicon dioxide (SiO 2) caps were
investigated. Caps stiffen the islands to reduce buckling and accelerate the lateral
relaxation, so that larger, flat, relaxed SiGe islands can be achieved. Using a 31 nm silicon …
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