Characterization of temperature dependent operation of a GaInNAs-based RCEPD designed for 1.3 μm
We report the characteristics of the temperature dependent operation of a GaInNAs-based
resonant-cavity-enhanced photodetector (RCEPD), designed to be operated at the
dispersion minimum optical communication window of 1.3 μm. A Transfer-Matrix Method
(TMM) was used to design the structure of the device. The absorption layer of the
photodetector is comprised of nine 7 nm-thick Ga 0.733 In 0.267 N 0.025 As 0.975 (Sb)/GaN
0.035 As 0.965 quantum wells, and 15 and 10 pairs of GaAs/AlAs distributed Bragg …
resonant-cavity-enhanced photodetector (RCEPD), designed to be operated at the
dispersion minimum optical communication window of 1.3 μm. A Transfer-Matrix Method
(TMM) was used to design the structure of the device. The absorption layer of the
photodetector is comprised of nine 7 nm-thick Ga 0.733 In 0.267 N 0.025 As 0.975 (Sb)/GaN
0.035 As 0.965 quantum wells, and 15 and 10 pairs of GaAs/AlAs distributed Bragg …