Chemical beam epitaxy growth and characterization of GaNAs/GaAs
K Takeuchi, T Miyamoto, T Kageyama… - Japanese journal of …, 1998 - iopscience.iop.org
A GaNAs layer has been grown on a GaAs substrate using chemical beam epitaxy (CBE)
with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N)
composition was well-controlled by the N 2 flow rate and was increased up to 2.7%,
maintaining a good crystal quality. The maximum N composition was estimated to be 20%
by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated
from both X-ray diffraction measurements and SIMS measurements were in good …
with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N)
composition was well-controlled by the N 2 flow rate and was increased up to 2.7%,
maintaining a good crystal quality. The maximum N composition was estimated to be 20%
by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated
from both X-ray diffraction measurements and SIMS measurements were in good …
Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs.
T Kanji, M Tomoyuki, K Takeo, K Fumio… - Japanese Journal of …, 1998 - cir.nii.ac.jp
抄録 A GaNAs layer has been grown on a GaAs substrate using chemical beam epitaxy
(CBE) with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N)
composition was well-controlled by the N 2 flow rate and was increased up to 2.7%,
maintaining a good crystal quality. The maximum N composition was estimated to be 20%
by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated
from both X-ray diffraction measurements and SIMS measurements were in good …
(CBE) with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N)
composition was well-controlled by the N 2 flow rate and was increased up to 2.7%,
maintaining a good crystal quality. The maximum N composition was estimated to be 20%
by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated
from both X-ray diffraction measurements and SIMS measurements were in good …
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