(57) ABSTRACT A process for chemical mechanical polishing a substrate containing
tungsten to at least reduce dishing of tungsten features of 100 um or less. The process
includes providing a substrate containing tungsten features of 100 um or less; providing a
polishing composition, containing, as initial components: water, an oxidizing agent; arginine
or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and,
optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide; …

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to
reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying
dielectrics. The process includes providing a substrate; providing a polishing composition,
containing, as initial components: water; an oxidizing agent; a dihydroxy bis-sulfide; a
dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH
adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; …