Coexistence of bulk and surface states probed by Shubnikov–de Haas oscillations in with high charge-carrier density

EK De Vries, S Pezzini, MJ Meijer, N Koirala, M Salehi… - Physical Review B, 2017 - APS
EK De Vries, S Pezzini, MJ Meijer, N Koirala, M Salehi, J Moon, S Oh, S Wiedmann
Physical Review B, 2017APS
Topological insulators are ideally represented as having an insulating bulk with
topologically protected, spin-textured surface states. However, it is increasingly becoming
clear that these surface transport channels can be accompanied by a finite conducting bulk,
as well as additional topologically trivial surface states. To investigate these parallel
conduction transport channels, we studied Shubnikov–de Haas oscillations in Bi 2 Se 3 thin
films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We …
Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a finite conducting bulk, as well as additional topologically trivial surface states. To investigate these parallel conduction transport channels, we studied Shubnikov–de Haas oscillations in thin films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We identify a clear Zeeman-split bulk contribution to the oscillations from a comparison between the charge-carrier densities extracted from the magnetoresistance and the oscillations. Furthermore, our analyses indicate the presence of a two-dimensional state and signatures of additional states the origin of which cannot be conclusively determined. Our findings underpin the necessity of theoretical studies on the origin of and the interplay between these parallel conduction channels for a careful analysis of the material's performance.
American Physical Society
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