transistors while maintaining high-performance characteristics. However, further area
reduction has again driven us to technological limits. To enhance the performance of next-
generation devices, Nanowire FET designs show some desirable characteristics.
Furthermore, to enhance the control limitations, a slight variation of the Nanowire FET,
known as the Multi-Bridge Channel FET (MBCFET) is introduced. In this research, we aim to …
Shifting from planer FET to FinFET has allowed us to significantly reduce the size of
transistors while maintaining high-performance characteristics. However, further area
reduction has again driven us to technological limits. To enhance the performance of next-
generation devices, Nanowire FET designs show some desirable characteristics.
Furthermore, to enhance the control limitations, a slight variation of the Nanowire FET,
known as the Multi-Bridge Channel FET (MBCFET) is introduced. In this research, we aim to …