Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance
A Karsenty, A Chelly - Solid-state electronics, 2014 - Elsevier
The electrical characteristics of two kinds of n-type SOI-MOSFETs are analyzed and
compared in order to build a consistent model. The first kind is an Ultra-Thin Body (UTB)
device for which the channel thickness is equal to the initial SOI wafer thickness value (here
46 nm). The second kind is what we refer to Nano-Scale Body (NSB) device for which the
initial SOI channel is thinned down to 1.6 nm using a recessed-gate process. The drain
current values were found surprisingly different by three orders of magnitude. Such a huge …
compared in order to build a consistent model. The first kind is an Ultra-Thin Body (UTB)
device for which the channel thickness is equal to the initial SOI wafer thickness value (here
46 nm). The second kind is what we refer to Nano-Scale Body (NSB) device for which the
initial SOI channel is thinned down to 1.6 nm using a recessed-gate process. The drain
current values were found surprisingly different by three orders of magnitude. Such a huge …
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