Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy
Polysilicon layers prepared by low-pressure chemical vapor deposition at 560° C, 620° C,
660° C, and 700° C were measured by Atomic Force Microscopy (AFM) and Spectroscopic
Ellipsometry (SE). Morphology, cross-sectional profile, roughness spectral density, and
roughness of the surfaces were investigated by AFM using window sizes of 1× 1 μm2, 10×
10 μm2, and 50× 50 μm2. The layer structure and the surface roughness were determined
by SE using the Bruggemann-Effective Medium Approximation (B-EMA). The Root Mean …
660° C, and 700° C were measured by Atomic Force Microscopy (AFM) and Spectroscopic
Ellipsometry (SE). Morphology, cross-sectional profile, roughness spectral density, and
roughness of the surfaces were investigated by AFM using window sizes of 1× 1 μm2, 10×
10 μm2, and 50× 50 μm2. The layer structure and the surface roughness were determined
by SE using the Bruggemann-Effective Medium Approximation (B-EMA). The Root Mean …
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