Comparison of Fe/Schottky and tunnel barrier contacts for electrical spin injection into GaAs
We compare electrical spin injection from Fe films into identical GaAs-based light-emitting
diodes (LEDs) using different tunnel barriers—a reverse-biased Fe/AlGaAs Schottky contact
and an Fe/Al 2 O 3 barrier. Both types of structures are formed in situ using a multichamber
molecular-beam epitaxy system. A detailed analysis of the transport data confirms that
tunneling occurs in each case. We find that the spin polarization achieved in the GaAs using
the Al 2 O 3 barrier is 40%(best case; 30% typical), but the electrical efficiency is significantly …
diodes (LEDs) using different tunnel barriers—a reverse-biased Fe/AlGaAs Schottky contact
and an Fe/Al 2 O 3 barrier. Both types of structures are formed in situ using a multichamber
molecular-beam epitaxy system. A detailed analysis of the transport data confirms that
tunneling occurs in each case. We find that the spin polarization achieved in the GaAs using
the Al 2 O 3 barrier is 40%(best case; 30% typical), but the electrical efficiency is significantly …
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