There is growing interest in microLED devices with lateral dimensions between 1 and 10
μm. However, reductions in external quantum efficiency (EQE) due to increased
nonradiative recombination at the surface become an issue at these sizes. Previous
attempts to study size-dependent EQE trends have been limited to dimensions above 5 μm,
partly due to fabrication challenges. Here, we present size-dependent EQE data for InGaN
microLEDs down to 1 μm in diameter fabricated using a process that only utilizes standard …