Comparison of the layered semiconductors GaSe, GaS, and GaSe1− xSx by Raman and photoluminescence spectroscopy
CP Leon, L Kador, KR Allakhverdiev… - Journal of applied …, 2005 - pubs.aip.org
The room-temperature Raman spectra of single crystals of GaSe, GaS, and mixed
compounds GaSe 1− x S x with 0.02⩽ x⩽ 0.8 were measured with a HeNe laser in confocal
configuration. The changes in the spectra indicate changes of the crystal structure. The
spectra of pure GaSe and of the mixed compound with x= 0.02 show pronounced
photoluminescence signals blueshifted from the laser line, whereas these signals do not
appear for higher sulfur content. Their origin is interpreted as second-harmonic generation …
compounds GaSe 1− x S x with 0.02⩽ x⩽ 0.8 were measured with a HeNe laser in confocal
configuration. The changes in the spectra indicate changes of the crystal structure. The
spectra of pure GaSe and of the mixed compound with x= 0.02 show pronounced
photoluminescence signals blueshifted from the laser line, whereas these signals do not
appear for higher sulfur content. Their origin is interpreted as second-harmonic generation …
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