Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy
M Kobayashi, Y Matsumoto, Y Ichikawa… - Applied physics …, 2008 - iopscience.iop.org
M Kobayashi, Y Matsumoto, Y Ichikawa, D Tsukada, T Suemasu
Applied physics express, 2008•iopscience.iop.orgHighly a-axis-oriented n-and p-type BaSi 2 films were grown on Si (111) substrates by
molecular beam epitaxy using Sb and In doping atoms, respectively. The hole concentration
of In-doped BaSi 2 was controlled in the range between 10 16 and 10 17 cm-3 at room
temperature by changing the temperature of the In Knudsen cell crucible. In contrast, the
electron concentration of Sb-doped BaSi 2 was controlled in the range between 10 16 and
10 20 cm-3 by the substrate temperature. The electron and hole mobilities decreased with …
molecular beam epitaxy using Sb and In doping atoms, respectively. The hole concentration
of In-doped BaSi 2 was controlled in the range between 10 16 and 10 17 cm-3 at room
temperature by changing the temperature of the In Knudsen cell crucible. In contrast, the
electron concentration of Sb-doped BaSi 2 was controlled in the range between 10 16 and
10 20 cm-3 by the substrate temperature. The electron and hole mobilities decreased with …
Abstract
Highly a-axis-oriented n-and p-type BaSi 2 films were grown on Si (111) substrates by molecular beam epitaxy using Sb and In doping atoms, respectively. The hole concentration of In-doped BaSi 2 was controlled in the range between 10 16 and 10 17 cm-3 at room temperature by changing the temperature of the In Knudsen cell crucible. In contrast, the electron concentration of Sb-doped BaSi 2 was controlled in the range between 10 16 and 10 20 cm-3 by the substrate temperature. The electron and hole mobilities decreased with increasing electron and hole density, respectively.
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