Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
FCP Massabuau, L Trinh-Xuan, D Lodié… - Journal of Applied …, 2013 - pubs.aip.org
Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with
cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting
InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the
morphology of an individual defect with its emission properties. The defects in question are
observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having
altered emission properties. Their sub-surface structure has previously been shown to …
cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting
InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the
morphology of an individual defect with its emission properties. The defects in question are
observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having
altered emission properties. Their sub-surface structure has previously been shown to …
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