… Specifically, we discussed the origin of defect levels introduced by germanium vacancies,
comparing to silicon. For the germanium interstitial, we illustrated the various configurations …

… In principle, the presence of dangling bonds in Ge can be … on a Ge atom back-bonded
by three Ge neighbors. There have been some reports of the EPR observation of DBs in Ge, …

Interactions among defects in germanium and silicon have been investigated. The solid
solutions involved bear a strong resemblance to aqueous solutions insofar as they represent …

… field of radiation-produced defects in Ge. Because of poor identification of point defects in this
… known defects in Si. However, there are many examples of striking dissimilarities between …

… application of Ge wafers is space solar cells, requiring high-quality defect-free material. Ge
can … However, transistors will be made only on thin Ge layers fabricated on a silicon handle or …

… to use germanium as an active device layer in deep sub-micron devices. This imposes
similar stringent material and process requirements for germanium as for silicon. Lattice defect …

… questions regarding point defects and their … germanium we identify a level at about 0.14
eV below the conduction band whose properties resemble in many respects those of a defect …

… defect in Ge seems to involve four rather than just two atoms, and we propose to call it a kite
defect… The formation energy for the interstitial at a hexagonal site is significantly higher in Ge …

… defect interactions. Finally, strategies to effectively control the diffusion and activation of dopants
in Ge … 3 that emerge from our understanding on the type and interaction of defects in Ge. …

… and silicon germanium. In the present review, we mainly focus on oxygen-related defects
and the impact of isovalent doping on their properties in silicon and silicon germanium. The …