AlGaN/GaN high-electron-mobility transistor structures grown on 100 mm high-resistivity Si
(111) substrates using plasma-assisted molecular beam epitaxy are reported. The two-
dimensional electron gas (2DEG) formation in the heterostructures was realized by the
growth optimization of two-step low temperature and high temperature AlN layers and GaN
buffer layer. High-electron mobility of 1100 cm 2/V s with a sheet carrier density of 9× 10 12
cm− 2 was achieved. The presence of 2DEG in the AlGaN/GaN interface was confirmed by …

We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors
(HEMT) on 100 mm Si (111) by ammonia molecular beam epitaxy. High growth rate
accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and
reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN (002) XRD
peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm
2/V· s were measured at RT and 90 K, respectively. Submicron gate devices exhibited good …