Dependence of dielectric constant of SiOCH low-k films on porosity and pore size
A Palov, TV Rakhimova, MB Krishtab… - Journal of Vacuum …, 2015 - pubs.aip.org
A simple, clear, and robust numerical approach to calculate dielectric constant of porous
organosilicate (SiOCH) based films with arbitrary shaped pores is proposed. The
calculations are based on modified Clausius–Mossotti equation and can be applied for the
films with wide range of porosity (0.01–0.96) and pore size (0.5–5 nm). The dielectric
constants calculated in assumption of preferential localization of CH 3 groups on pore wall
are in good agreement with the experimentally measured k-values. The advantage of the …
organosilicate (SiOCH) based films with arbitrary shaped pores is proposed. The
calculations are based on modified Clausius–Mossotti equation and can be applied for the
films with wide range of porosity (0.01–0.96) and pore size (0.5–5 nm). The dielectric
constants calculated in assumption of preferential localization of CH 3 groups on pore wall
are in good agreement with the experimentally measured k-values. The advantage of the …
以上显示的是最相近的搜索结果。 查看全部搜索结果