Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone
We present results on the deposition and characterization of defected graphene by the
chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals
is thermally decomposed acetone (C 2 H 6 CO) in Ar main gas flow. The deposition takes
place on (001) Si substrates at about 1150–1160° C. We established by Raman
spectroscopy the presence of single-to few-layered defected graphene deposited on two
types of interlayers that possess different surface morphology and consisted of mixed sp 2 …
chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals
is thermally decomposed acetone (C 2 H 6 CO) in Ar main gas flow. The deposition takes
place on (001) Si substrates at about 1150–1160° C. We established by Raman
spectroscopy the presence of single-to few-layered defected graphene deposited on two
types of interlayers that possess different surface morphology and consisted of mixed sp 2 …
以上显示的是最相近的搜索结果。 查看全部搜索结果