Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications
A Revathy, JV Kumar, P Murugapandiyan… - Micro and …, 2023 - Elsevier
An enhancement mode HETM with β-Ga 2 O 3 buffer is proposed, and its electrical
characteristics are analyzed using the physics-based numerical simulator ATLAS TCAD.
HEMT with p-GaN/AlGaN/GaN/β-Ga 2 O 3 utilized for normally-off mode operation of HEMT.
The proposed β-Ga 2 O 3 buffer based HEMT in this work reveals low on-resistance (R on),
high drain current density (I DS, max), high transconductance (gm, max), excellent
breakdown voltage (VBR) and low gate switching delay. The ultra-wide bandgap β-Ga 2 O 3 …
characteristics are analyzed using the physics-based numerical simulator ATLAS TCAD.
HEMT with p-GaN/AlGaN/GaN/β-Ga 2 O 3 utilized for normally-off mode operation of HEMT.
The proposed β-Ga 2 O 3 buffer based HEMT in this work reveals low on-resistance (R on),
high drain current density (I DS, max), high transconductance (gm, max), excellent
breakdown voltage (VBR) and low gate switching delay. The ultra-wide bandgap β-Ga 2 O 3 …