Design and fabrication of planar gunn nanodiodes based on doped GaN
J Mateos, T González… - 2019 IEEE Asia …, 2019 - ieeexplore.ieee.org
2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019•ieeexplore.ieee.org
With the aim of producing free-running Gunn oscillations in GaN devices, we propose the
use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the
use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an
AlGaN/GaN heterojunction. To this aim, efforts at different levels are being made in order to
optimize the material growth, processing, simulation and design of the devices.
use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the
use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an
AlGaN/GaN heterojunction. To this aim, efforts at different levels are being made in order to
optimize the material growth, processing, simulation and design of the devices.
With the aim of producing free-running Gunn oscillations in GaN devices, we propose the use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an AlGaN/GaN heterojunction. To this aim, efforts at different levels are being made in order to optimize the material growth, processing, simulation and design of the devices.
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