Design considerations and performance evaluation of 1200-V 100-A SiC MOSFET-based two-level voltage source converter
S Hazra, S Madhusoodhanan… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFET is capable of achieving better efficiency and better power
density of power converters due to its low on-state resistance and lower switching losses
compared to silicon (Si) Insulated Gate Bipolar Transistor. Operation of power converters at
higher switching frequency using SiC devices allows reduction in filter size and hence
improves the power to weight ratio of the converter. This paper presents switching
characterization of 1200-V 100-A SiC MOSFET module and compares the efficiency of a two …
density of power converters due to its low on-state resistance and lower switching losses
compared to silicon (Si) Insulated Gate Bipolar Transistor. Operation of power converters at
higher switching frequency using SiC devices allows reduction in filter size and hence
improves the power to weight ratio of the converter. This paper presents switching
characterization of 1200-V 100-A SiC MOSFET module and compares the efficiency of a two …
Design considerations and performance evaluation of 1200 V, 100 a SiC MOSFET based converter for high power density application
S Hazra, S Madhusoodhanan… - 2013 IEEE Energy …, 2013 - ieeexplore.ieee.org
Silicon Carbide (SiC) MOSFET is capable of achieving better efficiency, power density and
reliability of power converters due to its low on-state resistance, high temperature operation
capability and lower switching losses compared to silicon (Si) IGBT. Operation of power
converters at higher switching frequency using SiC devices allows reduction in filter size and
hence improves the power to weight ratio of the converter. This paper presents switching
characterization of 1200 V, 100 A SiC MOSFET module and compares efficiency of a Two …
reliability of power converters due to its low on-state resistance, high temperature operation
capability and lower switching losses compared to silicon (Si) IGBT. Operation of power
converters at higher switching frequency using SiC devices allows reduction in filter size and
hence improves the power to weight ratio of the converter. This paper presents switching
characterization of 1200 V, 100 A SiC MOSFET module and compares efficiency of a Two …
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