Design of a short electro-optic modulator based on SiGe HBT structure
A SiGe electro-optic modulator operating at wavelength of 1.55 μm is proposed. The “ON”
state voltage is set at 1.4 V. The arm of the MZI waveguide required to generate a π phase
shift is 73.6 μm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9
ps and 24.5 ps, respectively.
state voltage is set at 1.4 V. The arm of the MZI waveguide required to generate a π phase
shift is 73.6 μm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9
ps and 24.5 ps, respectively.
A SiGe electro-optic modulator operating at wavelength of 1.55μm is proposed. The “ON” state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a π phase shift is 73.6μm, and the total attenuation loss is 3.95dB. The rise and fall delay time is 70.9ps and 24.5ps, respectively.
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