Design optimization of ultra-fast silicon detectors
N Cartiglia, R Arcidiacono, M Baselga, R Bellan… - Nuclear Instruments and …, 2015 - Elsevier
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015•Elsevier
Abstract Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that
are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how
the design of LGAD can be optimized to exploit their increased output signal to reach
optimum timing performances. Our simulations show that these sensors, the so-called Ultra-
Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than
that of traditional silicon sensors.
are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how
the design of LGAD can be optimized to exploit their increased output signal to reach
optimum timing performances. Our simulations show that these sensors, the so-called Ultra-
Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than
that of traditional silicon sensors.
Abstract
Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.
Elsevier
以上显示的是最相近的搜索结果。 查看全部搜索结果