Detection of individual spin species via frequency-modulated charge pumping
We utilize a frequency-modulated charge pumping methodology to measure quickly and
conveniently single “charge per cycle” in highly scaled Si/SiO2 metal–oxide–semiconductor
field effect transistors. This is indicative of detection and manipulation of a single interface
trap spin species located at the boundary between the SiO2 gate dielectric and Si substrate
(almost certainly a Pb type center). This demonstration in sub-micrometer devices in which
Dennard scaling of the gate oxide has yielded extremely large gate oxide leakage currents …
conveniently single “charge per cycle” in highly scaled Si/SiO2 metal–oxide–semiconductor
field effect transistors. This is indicative of detection and manipulation of a single interface
trap spin species located at the boundary between the SiO2 gate dielectric and Si substrate
(almost certainly a Pb type center). This demonstration in sub-micrometer devices in which
Dennard scaling of the gate oxide has yielded extremely large gate oxide leakage currents …
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