Determination of high-frequency dielectric constant and surface potential of graphene oxide and influence of humidity by Kelvin probe force microscopy
FC Salomão, EM Lanzoni, CA Costa, C Deneke… - Langmuir, 2015 - ACS Publications
Langmuir, 2015•ACS Publications
We use Kelvin probe force microscopy (KPFM) and capacitance coupling (d C/dz) to study
the electrical properties of graphene oxide (GO). We propose using the d C/dz signal to
probe the high frequency dielectric constant of mono-and few-layer GO. Our measurements
suggest that the dynamic dielectric constant of GO is on the order of εGO≅ 3.0 ε0, in the high
frequency limit, and independent of the number of GO layers. The measurements are
performed at a humidity controlled environment (5% of humidity). The effects of increasing …
the electrical properties of graphene oxide (GO). We propose using the d C/dz signal to
probe the high frequency dielectric constant of mono-and few-layer GO. Our measurements
suggest that the dynamic dielectric constant of GO is on the order of εGO≅ 3.0 ε0, in the high
frequency limit, and independent of the number of GO layers. The measurements are
performed at a humidity controlled environment (5% of humidity). The effects of increasing …
We use Kelvin probe force microscopy (KPFM) and capacitance coupling (dC/dz) to study the electrical properties of graphene oxide (GO). We propose using the dC/dz signal to probe the high frequency dielectric constant of mono- and few-layer GO. Our measurements suggest that the dynamic dielectric constant of GO is on the order of εGO ≅ 3.0 ε0, in the high frequency limit, and independent of the number of GO layers. The measurements are performed at a humidity controlled environment (5% of humidity). The effects of increasing humidity on both the dC/dz and KPFM measurements are analyzed.
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