Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition

KS Kim, A Saxler, P Kung, M Razeghi, KY Lim - Applied physics letters, 1997 - pubs.aip.org
Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al
composition regime. The band-gap energy of AlInN ternary was measured by optical
absorption spectroscopy at room temperature. The band-gap energy of Al0. 92In0. 08N is
5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.©
1997 American Institute of Physics. S0003-69519701032-2 The III nitrides are useful for
fabrication of optoelectronic devices such as light-emitting diodes LEDs, and laser diodes …
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