composition regime. The band-gap energy of AlInN ternary was measured by optical
absorption spectroscopy at room temperature. The band-gap energy of Al0. 92In0. 08N is
5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.©
1997 American Institute of Physics. S0003-69519701032-2 The III nitrides are useful for
fabrication of optoelectronic devices such as light-emitting diodes LEDs, and laser diodes …