Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si
S Zollner, JG Chen, E Duda, T Wetteroth… - Journal of applied …, 1999 - pubs.aip.org
Spectroscopic rotating-analyzer ellipsometry employing a compensator and optical
transmission were used to measure the dielectric functions of bulk 4H and 6H SiC from 0.72
to 6.6 eV for light propagating nearly parallel to the hexagonal axis. The measurements
below the band gap show the presence of a thin surface layer, which was modeled as SiO 2.
The data are similar to results for cubic (3C) and 6H SiC from the literature, but differences
are notable, particularly above 4 eV. At 5.56 eV, we observe a critical point in 4H SiC, which …
transmission were used to measure the dielectric functions of bulk 4H and 6H SiC from 0.72
to 6.6 eV for light propagating nearly parallel to the hexagonal axis. The measurements
below the band gap show the presence of a thin surface layer, which was modeled as SiO 2.
The data are similar to results for cubic (3C) and 6H SiC from the literature, but differences
are notable, particularly above 4 eV. At 5.56 eV, we observe a critical point in 4H SiC, which …
以上显示的是最相近的搜索结果。 查看全部搜索结果