transmission were used to measure the dielectric functions of bulk 4H and 6H SiC from 0.72
to 6.6 eV for light propagating nearly parallel to the hexagonal axis. The measurements
below the band gap show the presence of a thin surface layer, which was modeled as SiO 2.
The data are similar to results for cubic (3C) and 6H SiC from the literature, but differences
are notable, particularly above 4 eV. At 5.56 eV, we observe a critical point in 4H SiC, which …