Dielectric properties of thin films grown on elemental and oxide metallic substrates
In an attempt to optimize leakage characteristics of α-C r 2 O 3 thin films, its dielectric
properties were investigated at local and macroscopic scale. The films were grown on Pd
(111), Pt (111), and V 2 O 3 (0001), supported on A l 2 O 3 substrate. The local conductivity
was measured by conductive atomic force microscopy mapping of C r 2 O 3 surfaces, which
revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A
strong correlation was found between these electrical defects and the grain boundaries …
properties were investigated at local and macroscopic scale. The films were grown on Pd
(111), Pt (111), and V 2 O 3 (0001), supported on A l 2 O 3 substrate. The local conductivity
was measured by conductive atomic force microscopy mapping of C r 2 O 3 surfaces, which
revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A
strong correlation was found between these electrical defects and the grain boundaries …
In an attempt to optimize leakage characteristics of α- thin films, its dielectric properties were investigated at local and macroscopic scale. The films were grown on Pd(111), Pt(111), and (0001), supported on substrate. The local conductivity was measured by conductive atomic force microscopy mapping of surfaces, which revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A strong correlation was found between these electrical defects and the grain boundaries revealed in the corresponding topographic scans. In comparison, the film on exhibited no leakage paths at similar tip bias value. Electrical resistance measurements through e-beam patterned top electrodes confirmed the resistivity mismatch between the films grown on different electrodes. The x-ray analysis attributes this difference to the twin free growth on seeding.
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