Dissolvable and biodegradable resistive switching memory based on magnesium oxide
S Wu, H Wang, J Sun, F Song, Z Wang… - IEEE Electron …, 2016 - ieeexplore.ieee.org
IEEE Electron Device Letters, 2016•ieeexplore.ieee.org
In this letter, dissolvable and biodegradable resistive switching devices with a cell structure
of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory
characteristics for nonvolatile application. The dissolution rate of Mg and MgO is
characterized in deionized (DI) water and in phosphate-buffered saline solution, with clear
difference, 0.36, 1.25, 0.057, and 0.13 nm/s, respectively. The Mg/MgO/Mg devices on silk
fibroin substrates are able to be completely dissolved as fast as 30 min while immersed in DI …
of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory
characteristics for nonvolatile application. The dissolution rate of Mg and MgO is
characterized in deionized (DI) water and in phosphate-buffered saline solution, with clear
difference, 0.36, 1.25, 0.057, and 0.13 nm/s, respectively. The Mg/MgO/Mg devices on silk
fibroin substrates are able to be completely dissolved as fast as 30 min while immersed in DI …
In this letter, dissolvable and biodegradable resistive switching devices with a cell structure of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory characteristics for nonvolatile application. The dissolution rate of Mg and MgO is characterized in deionized (DI) water and in phosphate-buffered saline solution, with clear difference, 0.36, 1.25, 0.057, and 0.13 nm/s, respectively. The Mg/MgO/Mg devices on silk fibroin substrates are able to be completely dissolved as fast as 30 min while immersed in DI water. The Mg/MgO/Mg devices have excellent prospects for the applications in transient electronics, secure memory systems, and implantable medical therapy devices.
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