Effect of Ga3+ doping on the photoluminescence properties of Y3Al5-xGaxO12: Bi3+ phosphor

A Yousif, V Kumar, HAAS Ahmed, S Som… - ECS Journal of Solid …, 2014 - iopscience.iop.org
ECS Journal of Solid State Science and Technology, 2014iopscience.iop.org
The structural and luminescence characteristics of a sol-gel combustion synthesized Y 3 Al 5-
x Ga x O 12: Bi 3+ phosphor with different concentration of Ga 3+ were investigated. The
Rietveld refinement analysis and luminescence studies indicated that increasing the
concentration of the Ga ions changed the bond lengths and lattice parameters of the
dodecahedron bonds and as a result the Bi 3+ experienced a different anionic environment
in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra …
Abstract
The structural and luminescence characteristics of a sol-gel combustion synthesized Y 3 Al 5-x Ga x O 12: Bi 3+ phosphor with different concentration of Ga 3+ were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi 3+ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga 3+ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga 3+ concentration.
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