Effect of Gallium doping on CdS thin film properties and corresponding Cu (InGa) Se2/CdS: Ga solar cell performance
Abstract The effect of Gallium (Ga) doping on CdS thin film properties and the performance
of the corresponding Cu (InGa) Se 2/CdS heterojunction solar cell has been investigated.
The CdS thin films were deposited using a conventional chemical bath deposition (CBD)
process. For a source of Ga dopant, a gallium nitrate (Ga (NO 3) 3) aqueous solution with Ga
concentration from 5× 10− 4 to 2× 10− 3 M has been used. Ga doping was carried out by
adding gallium nitrate aqueous solution directly to the main CBD solution that contained all …
of the corresponding Cu (InGa) Se 2/CdS heterojunction solar cell has been investigated.
The CdS thin films were deposited using a conventional chemical bath deposition (CBD)
process. For a source of Ga dopant, a gallium nitrate (Ga (NO 3) 3) aqueous solution with Ga
concentration from 5× 10− 4 to 2× 10− 3 M has been used. Ga doping was carried out by
adding gallium nitrate aqueous solution directly to the main CBD solution that contained all …
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