Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN
LEDs operating in the spectral range from 425 to 460nm. Samples were grown by
metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range
of 0–2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were
characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and
secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to …
LEDs operating in the spectral range from 425 to 460nm. Samples were grown by
metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range
of 0–2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were
characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and
secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to …
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