In this work, ZnO nanostructures are electrodeposited on ITO conducting substrate prepared from chloride baths. The influence of concentration of Zn 2+ on the electrochemical characteristics has been studied using cyclic voltammetry (CV) and chronoamperometry (CA) techniques. The Mott–Schottky measurements demonstrate an n-type semiconductor character for all samples with a carrier density varying between 1.47× 1,018 cm− 3 and 3.14× 1,018 cm− 3. Scanning electron microscopy (SEM) show arrays of vertically aligned ZnO nanorods (NRs) with good homogeneity. X-ray diffraction spectra demonstrate that films crystalline with the Würtzite structure with preferential (002) crystallographic orientation having c-axis perpendicular to the substrate. The high optical properties of the ZnO NRs with a low density of deep defects was checked by UV-Vis transmittance analyses, the band gap energy of films varies between 3.3 and 3.4 eV with transparency around 80-90%.