Layered-antiferromagnetic compound CuCrS₂ has been prepared by different methods. The analysis of X-ray diffraction patterns of different samples gave significant amount of vacancy-disorder of Cr-atoms within the layers. Extended period of sintering above 900 °C increases the transfer of Cr-atoms to the interstitial sites between the layers. This disorder has marginal effect on the Antiferromagnetic properties. The electrical conductivity is increased and the thermoelectric power remains positive and quite high between 150–400 μV/K in the paramagnetic state around room temperature with increase in disorder in different samples. We interpret the temperature dependence of electrical resistivity and thermoelectric power due to the localization of carriers by interstitial defects and the formation of magnetic polarons in the paramagnetic phase of CuCrS₂.