Effect of point defect injection on diffusion of boron in silicon and silicon–germanium in the presence of carbon
MSA Karunaratne, AFW Willoughby, JM Bonar… - Journal of applied …, 2005 - pubs.aip.org
Boron diffusion in Si and strained SiGe with and without C was studied using point defect
injection. Interstitial-, vacancy-and noninjection conditions were achieved by annealing Si
capping layers which were either bare, with Si 3 N 4 film or with Si 3 N 4+ SiO 2 bilayers,
respectively. Concentration profiles of B, Ge, and C were obtained using secondary-ion-
mass spectrometry and diffusion coefficients of B in each type of matrix were extracted by
computer simulation. Under inert annealing, we find that C strongly suppresses B diffusion in …
injection. Interstitial-, vacancy-and noninjection conditions were achieved by annealing Si
capping layers which were either bare, with Si 3 N 4 film or with Si 3 N 4+ SiO 2 bilayers,
respectively. Concentration profiles of B, Ge, and C were obtained using secondary-ion-
mass spectrometry and diffusion coefficients of B in each type of matrix were extracted by
computer simulation. Under inert annealing, we find that C strongly suppresses B diffusion in …
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