Plasma enhanced atomic layer epitaxy (PEALE) is a layer-by-layer crystalline growth
technique that is based on a pair of self-terminating and self-limiting gas-surface half-
reactions, in which at least one half-reaction involves species from a plasma. The inclusion
of plasma generally offers the benefit of substantially reduced growth temperatures and
greater flexibility in tailoring the gas-phase chemistry to produce varying film characteristics.
The benefits plasmas provide come at the cost of a complex array of process variables that …