Effect of oxygen pressure on the synthesis of YBa2Cu3O7−x thin films by post‐deposition annealing

R Feenstra, TB Lindemer, JD Budai… - Journal of Applied …, 1991 - pubs.aip.org
of both methods are combined, as we investigate the effect of oxygen partial pressure po, on
the epitaxial growth of … u307 _ X films by postdeposition annealing of amorphous precursor …

Effects of oxygen annealing on gas sensing properties of carbon nanotube thin films

L Valentini, L Lozzi, C Cantalini, I Armentano… - Thin solid films, 2003 - Elsevier
… the C 1s shape of our XPS … oxygen and carbon nanotubes in the annealed film, one can
exclude that the metallic behavior of the annealed films could be attributed to the presence of

Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors

S Ramachandran, J Narayan, JT Prater - Applied Physics Letters, 2006 - pubs.aip.org
… samples could not be measured as they were below the detection limit ofof conduction is
oxygen vacancies (and perhaps zinc interstitals) and that these are removed upon annealing

Oxygen annealing of copper: A review

FR Fickett - Materials science and engineering, 1974 - Elsevier
Annealing in the presence of a reduced pressure of oxygen is a useful technique for significantly
decreasing the low temperature electrical resistivity ofof the effect of oxygen annealing …

Effect of room temperature annealing on the properties of oxygen-deficient YBa2Cu3Ox films

S Libbrecht, E Osquiguil, B Wuyts, M Maenhoudt… - Physica C …, 1993 - Elsevier
… On the other hand, information about oxygen ordering effects in YBCO thin films is … influence
of oxygen ordering effects on various physical and structural properties of quenched oxygen-…

Effects of oxygen/argon ratio and annealing on structural and optical properties of ZnO thin films

B Zhou, AV Rogachev, Z Liu, DG Piliptsou, H Ji… - Applied Surface …, 2012 - Elsevier
… The flow rates of Ar gas in the process of etching and depositing were kept at 3.2 and 35.0 …
To study the effect of oxygen pressure on the performance of ZnO film, the flow rate of oxygen

Effect of annealing temperature on oxygen vacancy concentrations of nanocrystalline CeO2 film

K Wang, Y Chang, L Lv, Y Long - Applied Surface Science, 2015 - Elsevier
of oxygenoxygen vacancy plays an important role on the properties of the nanocrystalline
CeO 2 film, and it also provides a possible way to control the concentration of oxygen

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

KH Ji, JI Kim, HY Jung, SY Park, R Choi… - Applied Physics …, 2011 - pubs.aip.org
… , the effect of O 2 HPA on the V th photoinstability of IGZO … While the device A annealed at
the low O 2 pressure of 0.2 atm … application of NBIS for 7200 s, the stability ( Δ V th = − 1.9 V ) of

Effects of oxygen annealing on the physical properties and surface microstructures of La0. 8Ba0. 2MnO3 films

P Murugavel, JH Lee, KB Lee, JH Park… - … of Physics D: Applied …, 2002 - iopscience.iop.org
… However, the importance of the initial oxygen content has … of initial oxygen content and the
post-annealing process in controlling the transport properties and surface microstructure of an …

Effects of oxygen annealing on dielectric properties of LuFeCuO4

Y Matsuo, M Suzuki, Y Noguchi… - Japanese journal of …, 2008 - iopscience.iop.org
… the effect of oxygen annealing on dielectric properties of … with high-pressure oxygen annealing
and the size of nanodomains with … by the shortrange ordering of Fe3þ and Cu2þ ions on a …