The effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-
annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at
dose levels up to 1000 Gy⁠. Parameters including mobility, threshold voltage, subthreshold
swing, and leakage current, as well as flicker and thermal noise coefficients, were
determined as a function of dose. In addition, the physical mechanisms of the observed
changes in these parameters are analyzed in terms of radiation-generated charge in the …