In this paper, we report on the results of experimental and theoretical study of a promising way for suppression of the efficiency droop with current in InGaN‐based light emitting diodes. Simulations carried out using a drift‐diffusion approach with quantum‐mechanical corrections clearly show that non‐radiative Auger recombination is the principal mechanism limiting the device performance at high‐injection level. New design of LED heterostructure with short‐period superlattice in the active region is proposed and assessed theoretically. Experimentally, the implementation of the structure design in high‐power devices has resulted in substantial suppression of the efficiency droop compared to conventional multiquantum‐well InGaN LEDs.